1 d a t a s h e e t : c 3 d 0 8 0 6 5 a r e v . - C3D08065A Csilicon carbide schottky diode z -r ec ? r ectifier v rrm = 650 v i f(avg) = 8 a q c = 21 nc features ? 650-volt schottky rectifer ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction - typical pfc p out : 800w-1600w ? motor drives - typical power : 3hp-4hp package to-220-2 maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v dc dc blocking voltage 650 v i f(avg) average forward current 8 a t c =150?c, dc i frm repetitive peak forward surge current 57 36 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 t c =110?c, t p =10 ms, half sine wave, d=0.3 i fsm non-repetitive peak forward surge current 80 60 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 t c =110?c, t p =10 ms, half sine wave, d=0.3 i fsm non-repetitive peak forward surge current 220 a t c =25?c, t p = 10 s, pulse p tot power dissipation 100 43 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw pin 1 pin 2 case part number package marking C3D08065A to-220-2 c3d08065 subject to change without notice. www.cree.com
2 C3D08065A rev. - 60 70 80 90 100 reverse current (ua) reverse characteristics 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000 i r reverse current (ua) v r reverse voltage (v) electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.6 1.9 1.8 2.4 v i f = 8 a t j =25c i f = 8 a t j =175c i r reverse current 12 24 60 220 a v r = 650 v t j =25c v r = 650 v t j =175c q c total capacitive charge 21 nc v r = 650 v, i f = 8a d i /d t = 500 a/ s t j = 25c c total capacitance 441 39 33 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 1.5 c/w typical performance figure 1. forward characteristics figure 2. reverse characteristics v r reverse voltage (v) i r reverse current ( a) t j = 25c t j = 75c t j = 1 25c t j = 175c 100 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 800 900 1000 10 9 8 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 v f forward voltage (v) i f forward current (a) t j = 25c t j = 75c t j = 1 25c t j = 175c
3 C3D08065A rev. - figure 3. current derating figure 4. capacitance vs. reverse voltage figure 5. transient thermal impedance typical performance 60 50 40 30 20 10 0 25 50 75 100 125 150 175 i f(peak) peak forward current (a) 20% duty* 30% duty* 50% duty* 70% duty* dc t c case temperature ( c ) * frequency > 1khz 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 tim e (s) zth (c/w) 250 200 150 100 50 0 1 10 100 1000 c capacitance (pf) v r reverse voltage (v )
4 C3D08065A rev. - power dissipation (w) t c case temperature ( c ) figure 6. power derating typical performance 110 100 90 80 70 60 50 40 30 20 10 0 power dissipation (w) t c case temperature ( c ) 25 50 75 100 125 150 175 60.0 70.0 80.0 90.0 100.0 110.0 power dissipation (w) 0.0 10.0 20.0 30.0 40.0 50.0 60.0 25 50 75 100 125 150 175 power dissipation (w) t c case temperature (c)
5 C3D08065A rev. - pos inches millimeters min max min max a .381 .410 9.677 10.414 b .235 .255 5.969 6.477 c .100 .120 2.540 3.048 d .223 .337 5.664 8.560 e .590 .615 14.986 15.621 f .143 .153 3.632 3.886 g 1.105 1.147 28.067 29.134 h .500 .550 12.700 13.970 j r 0.197 r 0.197 l .025 .036 .635 .914 m .045 .055 1.143 1.397 n .195 .205 4.953 5.207 p .165 .185 4.191 4.699 q .048 .054 1.219 1.372 s 3 6 3 6 t 3 6 3 6 u 3 6 3 6 v .094 .110 2.388 2.794 w .014 .025 .356 .635 x 3 5.5 3 5.5 y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 note: 1. dimension l, m, w apply for solder dip finish a c e d g h b j l m n f p q s t u v w x y m i n m a x m i n m a x a . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 b . 2 3 5 . 2 5 5 5 . 9 6 9 6 . 4 7 7 c . 1 0 2 . 1 1 2 2 . 5 9 1 2 . 8 4 5 d . 3 3 7 . 3 3 7 8 . 5 6 0 8 . 5 6 0 e . 5 9 0 . 6 1 0 1 4 . 9 8 6 1 5 . 4 9 4 f . 1 4 9 . 1 5 3 3 . 7 8 5 3 . 8 8 6 g 1 . 1 2 7 1 . 1 4 7 2 8 . 6 2 6 2 9 . 1 3 4 h . 5 3 0 . 5 5 0 1 3 . 4 6 2 1 3 . 9 7 0 j l . 0 2 8 . 0 3 6 . 7 1 1 . 9 1 4 m . 0 4 5 . 0 5 5 1 . 1 4 3 1 . 3 9 7 n . 1 9 5 . 2 0 5 4 . 9 5 3 5 . 2 0 7 p . 1 7 0 . 1 8 0 4 . 3 1 8 4 . 5 7 2 q . 0 4 8 . 0 5 4 1 . 2 1 9 1 . 3 7 1 s 3 5 3 5 t 3 5 3 5 u 3 5 3 5 v . 1 0 0 . 1 1 0 2 . 5 4 2 . 7 9 4 w . 0 1 4 . 0 2 1 . 3 5 6 . 5 3 3 x 3 5 3 5 y . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 z . 1 3 0 . 1 5 0 3 . 3 0 2 3 . 8 1 0 i n c h e s m i l l i m e t e r s p o s r 0 . 0 1 0 r 0 . 2 5 4 1 2 z package dimensions package to-220-2 pin 1 pin 2 case
6 6 C3D08065A rev. - this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power recommended solder pad layout part number package marking C3D08065A to-220-2 c3d08065 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. to-220-2 diode model v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 ) note: t j = diode junction temperature in degrees celcius vf t = v t +if*r t v t = 0.93+(t j * -9.3*10 -4 ) r t = 0.058+(t j * 5.7*10 -4 )
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